自旋电子学
磁性半导体
掺杂剂
材料科学
兴奋剂
铁磁性
带隙
光致发光
半导体
量子点
光电子学
宽禁带半导体
凝聚态物理
纳米技术
物理
作者
Qi Zhao,Qing Lü,Yi Liu,Mingzhe Zhang
摘要
Magnetic semiconductor materials have been highly desired for spintronic applications in the past few years. Doping is an effective method to manipulate the magnetic and optical characteristics of non-magnetic semiconducting materials. Tin disulfide (SnS2), as a wide bandgap layered semiconductor, is a promising material in many fields, especially in spintronic devices. In this work, we propose a facile chemical reaction method to synthesize SnS2:Ce3+ quantum dots (QDs), and the optical and magnetic characteristics of the as-obtained samples are fully investigated. The results show that the substitutional Ce3+ dopants introduce robust intrinsic room-temperature ferromagnetism in the SnS2 semiconductor and the doping concentration of Ce3+ ions effectively influences the optical bandgap and photoluminescence properties of the samples. Furthermore, the theoretical calculations using VASP software indicate that ferromagnetism mainly comes from the exchange interaction between 4f and 5d orbitals of the Ce dopant. These findings demonstrate that the doping dependent optical and magnetic characteristics of the SnS2:Ce3+ QD material can enable its application in electronics and spintronics.
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