Characterization of MBE-grown 1.55-µm GaSb-based multiple-quantum-well lasers at cryogenic temperatures

GaSb-based multiple-quantum-well lasers with In_0.2Ga_0.8Sb wells, Al_0.35Ga_0.65Sb barriers, and Al_0.9Ga_0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.