The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

There is continuous activity to increase the efficiency and reduce the size of power electronic systems and modules developed for transportation and automotive electrification applications [1], [2]. One of the key requirements for achieving these objectives is to operate semiconductor devices at higher power density and junction temperature (Tj max), while maintaining high reliability. The emergence of wideband-gap (WBG) semiconductors [silicon carbide (SiC) and gallium nitride (GaN)] [9] and new high-temperature die-attach methods, interconnects, and packaging materials [9] enables power-device manufacturers to increase Tj max from Tj = 150 °C to Tj = 175 °C and, further, to Tj = 200 °C [3]-[10].