碳化硅
材料科学
陶瓷
剪切模量
复合材料
碳化物
各向异性
模数
维氏硬度试验
半导体
软化
宽禁带半导体
材料性能
杨氏模量
光电子学
微观结构
光学
物理
作者
Weiwei Xu,Fangfang Xia,Lijie Chen,Meng Wu,Tieqiang Gang,Yuelong Huang
标识
DOI:10.1016/j.jallcom.2018.07.299
摘要
Silicon carbide is widely used as ultra high-temperature ceramics, semiconductors, and pressure sensors with promising potentials for high-temperature, high-endurance, and radiation hardened applications. Daunting difficulties in experimental investigations of thermophysical properties hinder the better understanding of high-temperature material behaviors of silicon carbide. We present a comprehensive study of temperature-dependent mechanical and thermodynamic properties of SiC polytypes by first-principles methods. The obvious anisotropy of linear expansion and elasticity is found for 3C-SiC, while it is not distinct for other non-cubic SiC polytypes. Results show that the temperature dependences of mechanical properties exhibit the softening behavior, in which small linear reduction (∼4.4%) in Vickers hardness and shear modulus but large linear reduction (∼7.0%) in Young's modulus are detected. The heat-resistant properties of SiC polytypes are ranked as 3C-SiC < 4H-SiC < 6H-SiC < 15R-SiC < 2H-SiC. The present predictions are in favorable accord with available measured data in the literature.
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