材料科学
钙钛矿(结构)
光电子学
电极
卤化物
磁滞
电解质
整改
纳米技术
电压
化学工程
无机化学
电气工程
物理化学
工程类
物理
化学
量子力学
作者
Junkai Zhao,Shujun Li,Wenchao Tong,Guanwen Chen,Yanhe Xiao,Shuijin Lei,Baochang Cheng
标识
DOI:10.1002/aelm.201800206
摘要
Abstract Organic–inorganic halide perovskite (OHP) materials have attracted remarkable attention for the great promise of optoelectronic applications. Unfortunately, hysteresis in the current–voltage response links to the stability and reliability assessment of OHP photovoltaic device that must be addressed. Here, light‐induced antipolar resistive switching (RS) effect is demonstrated in an individual MAPbI 3 micro‐/nanofiber–based two‐terminal device after aging for 4 d. The antipolar RS is attributed to reversible electrochemical reactions in the vicinity of Ag electrode, where Ag serves as the work electrode and MAPbI 3 acts as the solid electrolyte. That makes conductive behavior of antipolar RS similar with cyclic voltammetry curves of capacitances. Concomitantly, the antipolar RS shows slow dissipation kinetics, which is employed to realize the application of nonvolatile memories. This work establishes the potential for the versatile solid state devices that can efficiently couple interface reaction, charge migration, and photoelectrical effects in an individual micro‐/nanodevice.
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