低噪声放大器
放大器
噪声系数
计算机科学
电气工程
蓝牙
软件无线电
电子工程
GSM网络
WiMAX公司
炸薯条
无线
CMOS芯片
电信
工程类
出处
期刊:International Journal of Computer Science and Information Technology
[Academy and Industry Research Collaboration Center]
日期:2012-12-31
卷期号:4 (6): 51-63
被引量:4
标识
DOI:10.5121/ijcsit.2012.4605
摘要
In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver.The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity.This situation forces designers to make choices in the design of RF circuits.In this paper the aim is to design and simulate a novel and single Chip consists of a tri-band low noise amplifier (LNA) operating simultaneously at three frequency bands 1.9 GHz, 2.4 GHz and 5 GHz for WLAN, WiFi and WiMax receivers, is designed and presented in this paper.It can be used in many applications of wireless communication (GSM, Zigbee, Bluetooth, Wi-Fi, HiperLAN, UWB, etc ...) for 3G and 4G networks.The proposed circuit is based on two amplifiers, dual-band and simple band, with transistor GaAs FET type ATF 10136 that has a better performance, successful integration of feasibility and a low price compared with other technologies.Simulations of the operation of the amplifier were performed with the software Agilent Advanced Design System (ADS) and Ansoft software and performance of the amplifier were recorded and analyzed.A single stage LNA has successfully been designed with 29.3dB, 24.56dB and 11.93dB with noise figure of 0.44dB, 0.49dB and 4.42dB respectively at three frequency bands 1.9 GHz, 2.5 GHz and 5 GHz.
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