石墨烯
材料科学
欧姆接触
氧化物
热传导
空间电荷
存水弯(水管)
电压
光电子学
偏压
电荷密度
分析化学(期刊)
纳米技术
化学
电气工程
物理
复合材料
工程类
电子
气象学
冶金
色谱法
图层(电子)
量子力学
作者
Daeha Joung,Anindarupa Chunder,Lei Zhai,Saiful I. Khondaker
摘要
We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75×1016 cm−3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.
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