材料科学
铜
电阻率和电导率
互连
铝
泥浆
冶金
制作
干法蚀刻
蚀刻(微加工)
刮擦
腐蚀
表征(材料科学)
复合材料
纳米技术
工程类
病理
电气工程
医学
替代医学
计算机科学
计算机网络
图层(电子)
作者
Byoung Jun Cho,Jin Goo Park,Shohei Shima,Satomi Hamada
标识
DOI:10.4028/www.scientific.net/ssp.219.205
摘要
Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion [1].
科研通智能强力驱动
Strongly Powered by AbleSci AI