绝缘栅双极晶体管
饱和电流
兴奋剂
材料科学
饱和（图论）
电压
光电子学
电气工程
电子工程
工程类
数学
组合数学
作者
Mingchao Gao,Rui Jin,Yaohua Wang,Jiang Liu,Li Li,Li Cui,Ruifen Nie,Wanru Sun,Junmin Wu,Wujie Chao
出处
期刊：
日期：2021-07-01
卷期号：ed 30: 412-415
被引量：3
标识
DOI：10.1109/mlise54096.2021.00086
摘要
A novel 3300V/63A IGBT is developed by optimizing the MOS structure. The saturation voltage is lowered about 0.3V by increasing the carrier storage layer doping concentration. The maximum turn off current is increased 40% by optimizing the doping concentration of Pwell. The IGBT was finally designed with the 2.5V saturation voltage, and can be safely turned off at 350A.
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(2025-6-4)
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