Silicon carbide and related materials 2006 : ECSCRM 20006 [i.e. 2006], Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are wide-bandgap semiconductors which also possess extraordinary chemical, electrical and optical properties that make them uniquely attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to survive harsh operating conditions.This collection closely reflects the latest experimental and theoretical advances made in this field; divided into the sub-sections: SiC Bulk Growth, SiC Epitaxy, SiC Characterization and Theory, SiC Processing, SiC Devices and Nitrides and Related Materials.The impressive progress reported here will serve as a source of stimulating ideas for anyone working with these materials.