Two-dimensional semiconductor materials with high stability and electron mobility in group-11 chalcogenide compounds: MNX (M = Cu, Ag, Au; N = Cu, Ag, Au; X = S, Se, Te; M ≠ N)

The three-element monolayers α-MNX designed have suitable bandgap, excellent stability and similar mobility to graphene, which can be used in next-generation nanoelectronic devices.