量子点
亮度
材料科学
量子效率
二极管
光电子学
发光二极管
电子
阳极
发光效率
阴极
有机发光二极管
图层(电子)
电流密度
分析化学(期刊)
化学
光学
纳米技术
物理
电极
物理化学
量子力学
色谱法
作者
BoRam Hwang,Yebin Eun,Gyeong-Pil Jang,Ji‐Hye Yang,Mi-Young Ha,Dae‐Gyu Moon,Chang Kyo Kim
标识
DOI:10.1002/pssa.202100856
摘要
Herein, the outstanding efficiency of solution‐processed quantum‐dot (QD) light‐emitting diodes (QLEDs) is demonstrated, which is achieved by adjusting the thickness of their Zn 0.9 Mg 0.1 O nanoparticle (NP) electron transport layer (ETL).The NPs are prepared by the sol‐gel method. As the thickness increases, the current density of the QLEDs decreases because of the increased resistance of the Zn 0.9 Mg 0.1 O NP ETL. As the thickness increases from 10 to 35 nm, the luminance, luminous efficiency, and external quantum efficiency (EQE) also increase because of the improved charge balance between electrons and holes in the QD emissive layer (EML). In contrast, as the thickness increases beyond 35–120 nm, these three variables decrease because of the worsening charge balance, which is attributing to deficient electron injection from the cathode into the QD EML compared with hole injection from the anode into the EML. The QLED with a 35 nm thick Zn 0.9 Mg 0.1 O NP ETL exhibits the highest luminance, luminous efficiency, and EQE, with values of 128 084 cd m −2 , 88.8 cd A −1 , and 21.3%, respectively. The superior device performance and good charge balance to the appropriate ETL thickness are attributed.
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