Antimonide e-SWIR, MWIR, and LWIR barrier infrared detector and focal plane array development

The unipolar barrier photodetector architecture such as the nBn provides an effective means for lowering generationrecombination dark current by suppressing Shockley-Read-Hall processes, and for reducing surface leakage dark current. This has been especially beneficial for III-V semiconductor based infrared photodiodes, which traditionally tend to suffer from excess depletion dark current and the lack of good surface passivation. Advances in bulk and type- II superlattice infrared absorber materials have provided continuously adjustable cutoff wavelength span ranging from 2 to 14 μm and beyond, greatly expanding the limited coverage provided by traditional bulk III-V infrared detectors based on InGaAs and InSb. In this work we discuss recent developments of antimonide-based extended-SWIR, MWIR, and LWIR detectors and focal plane arrays at the NASA Jet Propulsion Laboratory.