激光阈值
材料科学
光电子学
带隙
纳米光子学
激光器
低语长廊波浪
半导体
薄膜
直接和间接带隙
光学
谐振器
纳米技术
物理
波长
作者
Junghyun Sung,Dong‐Jin Shin,HyunHee Cho,Seong Won Lee,Seung Min Park,Young Duck Kim,Jong Sung Moon,Je‐Hyung Kim,Su‐Hyun Gong
出处
期刊:Nature Photonics
[Springer Nature]
日期:2022-10-13
卷期号:16 (11): 792-797
被引量:15
标识
DOI:10.1038/s41566-022-01085-w
摘要
Small semiconductor lasers that can be integrated on a chip are essential for a wide range of optical applications, including optical computing, communication and sensing. Practical laser applications have only been developed with direct-bandgap materials because of a general belief that lasing action from indirect-bandgap materials is almost impossible. Here we report unexpected indirect-bandgap transition lasing in an ultra-thin WS2 disk. We demonstrate that a 50-nm-thick WS2 disk offers efficient optical gain and whispering gallery modes that are sufficient for lasing action. As a result, the WS2 disk exhibits indirect transition lasing, even under continuous-wave excitation at room temperature. Our experimental results are in close agreement with theoretical modelling for phonon-assisted photon lasing. The results derived from external cavity-free ultra-thin WS2 layers offer a new direction for van-der-Waals-material-based nanophotonics and introduce the possibility for optical devices based on indirect-bandgap materials.
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