p-GaN Gate HEMT with the Buffer Hole Compensation Layer for Achieving Repetitive Avalanche-Like Breakdown Capability

In this work, the p-GaN gate HEMT with the buffer hole compensation layer (HC-HEMT) for achieving repetitive avalanche-like breakdown capability is investigated. Different from the conventional non-avalanche GaN HEMT, the HC-HEMT features a hole compensation layer in the buffer, which effectively constructs a structure for hole removal. During reverse breakdown, this hole removal structure enhances the device's ability to dissipate internal energy. The proposed device successfully possesses the ability for repetitive overvoltage, rather than experiencing irreversible thermal failure. Furthermore, the positive-temperature coefficient associated with avalanche breakdown is observed in temperature-dependence tests. To our knowledge, this is the first time that avalanche-like breakdown behavior has been observed in p-GaN gate HEMTs. The results validate that HC-HEMT is essential for enhancing the reliability of GaN HEMTs.