整改
化学
异质结
金属有机骨架
薄膜
图层(电子)
基质(水族馆)
格子(音乐)
纳米技术
光电子学
有机化学
材料科学
吸附
电气工程
电压
工程类
地质学
物理
海洋学
声学
作者
Pooja Sindhu,Nirmalya Ballav
出处
期刊:Inorganic Chemistry
[American Chemical Society]
日期:2023-07-03
卷期号:62 (28): 10887-10891
被引量:1
标识
DOI:10.1021/acs.inorgchem.3c01489
摘要
Depositing thin films of pristine metal-organic framework (MOF) on top of a lattice-matched and molecularly doped MOF could provide a new path for generating electronic heterostructures of MOFs with well-defined interfaces. Herein, the Cu3BTC2 (top-layer)/TCNQ@Cu3BTC2 (bottom-layer) system is fabricated by sequential deposition on a functionalized Au substrate, and clear-cut rectification of electrical current across the thin film was observed at room-temperature. Interestingly, the electrical current rectification ratio (RR) was found to be significantly influenced by the effect of temperature (400 K), resulting in a remarkable figure in the domain of MOFs.
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