Through Mold Vertical Interconnect Formation in FOWLP using conductive paste

Through-Mold Interconnects (TMI) have been widely adopted and integrated into Fan-out Wafer Level Packaging (FOWLP) for semiconductor packaging technology. With the increasingly I/O counts and higher performance applications, the incremental density of lateral and vertical interconnects is essential to enhance the interconnections development in circuit miniaturization. This paper will discuss an alternative cost-effective and versatile approach, conductive paste via-filling, to form vertical interconnections between the embedded electrical routes to the external connections of the FOWLP. This approach promotes the ability in forming of vertical interconnections with greater critical dimension and depths, as compared to the existing Through-Mold Interconnect (TMI) formation methods.