光电探测器
异质结
材料科学
共价键
光电子学
联轴节(管道)
纳米技术
化学
有机化学
冶金
作者
Yuan‐Hao Zhu,Bohan Feng,Yuhan Su,Guangyuan Li,Yingming Liu,Yuxin Hou,Jie Zhang,Wenjie Li,Guo‐Hua Zhong,Chunlei Yang,Ming Chen
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-05-20
卷期号:24 (22): 6778-6787
被引量:7
标识
DOI:10.1021/acs.nanolett.4c01515
摘要
Controllable large-scale integration of two-dimensional (2D) materials with organic semiconductors and the realization of strong coupling between them still remain challenging. Herein, we demonstrate a wafer-scale, vertically layered SnSe2/PTAA heterojunction array with high light-trapping ability via a low-temperature molecular beam epitaxy method and a facile spin-coating process. Conductive probe atomic force microscopy (CP-AFM) measurements reveal strong rectification and photoresponse behavior in the individual SnSe2 nanosheet/PTAA heterojunction. Theoretical analysis demonstrates that vertically layered SnSe2/PTAA heterojunctions exhibit stronger C-Se covalent coupling than that of the conventional tiled type, which could facilitate more efficient charge transfer. Benefiting from these advantages, the SnSe2/PTAA heterojunction photodetectors with an optimized PTAA concentration show high performance, including a responsivity of 41.02 A/W, an external quantum efficiency of 1.31 × 104%, and high uniformity. The proposed approach for constructing large-scale 2D inorganic-organic heterostructures represents an effective route to fabricate high-performance broadband photodetectors for integrated optoelectronic systems.
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