材料科学
双稳态
量子点
聚合物
氧化铟锡
甲基丙烯酸甲酯
图层(电子)
光电子学
透射电子显微镜
纳米复合材料
旋涂
纳米颗粒
纳米技术
纳米化学
聚合物纳米复合材料
涂层
化学工程
复合材料
聚合
工程类
作者
Dong Ick Son,Chan Ho You,Jae Hun Jung,Tae Whan Kim
摘要
Organic bistable devices (OBDs) fabricated utilizing ZnO quantum dots (QDs) embedded in a poly(methyl methacrylate) (PMMA) layer were fabricated by using a spin-coating technique. Transmission electron microscopy images revealed that 5-nm-diameter ZnO QDs were formed inside the PMMA polymer layer. Current-voltage (I-V) measurements on Al/ZnO QDs embedded in PMMA layer/indium-tin-oxide devices at 300 K showed electrical bistability. The maximum ON/OFF ratio of the current bistability for the OBDs was as large as 4×104. Carrier transport mechanisms for the OBDs are described by using several models to fit the experimental I-V data.
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