A dendrite-free Zn anode with oriented (101) crystal plane under fast kinetics by regulating interfacial electric fields

The differences in Zn crystal plane kinetics can lead to non-uniform deposition, promoting dendrite growth and side reactions, especially under high deposition capacities. Fast kinetics can also cause anion depletion on the zinc anode surface, leading to uneven electric field distribution and worsening these issues. Inducing preferred electrodeposition of the Zn (101) crystal plane can ensure dense epitaxial growth and achieve fast reaction kinetics. However, its highly reactive and wave-like arrangement will also lead to higher hydrogen evolution activity and cause uneven electric field distribution, accelerating side reactions and dendrite growth. This study utilizes the adsorption ability of 2-mercaptoethanesulfonate (MES) anion on the zinc anode surface to optimize the interfacial concentration and electric fields. It effectively reduces the presence of H₂O on the zinc anode surface, minimizing side reactions and inducing oriented growth of Zn (101) crystal plane. Furthermore, a high concentration of MES anions at the interface can effectively prevent the space charge effect caused by the depletion of SO₄^2- anions, thereby inhibiting dendrite growth caused by the local electric field. This strategy enables Zn//Zn symmetric cells to achieve 3000 h of cycle life and demonstrates excellent performance in high mass-loading, low N/P ratio Zn//VO₂ full cells.