Monolithically integrated erbium-doped polycrystalline Al 2 O 3 waveguide amplifier on silicon photonics platform

We demonstrated the monolithic integration of a polycrystalline Al 2 O 3 :Er 3+ waveguide amplifier onto the passive Si 3 N 4 TriPleX platform, enabling high-performance on-chip amplification for photonic integrated circuits. The polycrystalline Al 2 O 3 :Er 3+ was deposited using reactive magnetron co-sputtering, ensuring compatibility with large-scale fabrication. On-chip wavelength division multiplexers, based on directional couplers, enabled the combining and splitting of the pump and signal powers on-chip. The 30 cm long waveguide amplifier, with a concentration of 1.6 × 10 20 ions/cm 3 , was bidirectionally pumped at 1480 nm. The integrated amplifier demonstrated a small-signal net gain exceeding 16 dB with a noise figure of approximately 3 dB and a broad gain bandwidth of 80 nm. These results mark a significant step toward fully integrated rare-earth-ion-doped amplifiers for the next-generation of active-passive photonic integrated circuits compatible with silicon photonics platforms.