Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Abstract Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field‐effect transistors, but the perfect sp 2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n‐type field‐effect transistor for constructing complementary metal–oxide–semiconductor electronics. Most importantly, a quasi‐broken‐gap (BG) heterojunction tunnel field‐effect transistor (TFET) is first demonstrated based on an individual partial‐filling CsPbBr 3 /CNT and exhibits a subthreshold swing of 35 mV dec −1 with a high on‐state current of up to 4.9 µA per tube and an on/off current ratio of up to 10 5 at room temperature. The quasi‐BG TFET based on the CsPbBr 3 /CNT coaxial heterojunction paves the way for constructing high‐performance and ultralow power consumption integrated circuits.