Comparative evaluation of high current SiC schottky diodes and Si PN junction diodes

SiC Schottky barrier diodes (SBD) are commercially available in the 600 V breakdown voltage range and 1.2 kV SiC SBDs have been announced. In this paper we compare the behavior of recently fabricated high-current 1.2 kV SBD with that of equivalent Si diodes, underlining the high temperature working operation capability (up to 200/spl deg/C), Lower reverse leakage current is obtained using Ni instead of Ti (the most spread solution) for the Schottky contact. The temperature dependence of forward characteristics, reverse leakage current and switching recovery performances have been analyzed.