Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

SiO2 ALD with precursors of tris(dimethylamino)silane (TDMAS) and ozone on Si(100) surfaces at room temperature were investigated by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS dissociatively adsorbs on OH sites of hydroxylated Si surfaces and ozone irradiation is effective to remove the hydroaminocarbon adsorbates introduced in the course of the TDMAS adsorption. After the ozone treatment, H2O vapor treatments at substrate temperatures around 160 åC allow generation of OH sites for the TDMAS adsorption. The TDMAS adsorption and the ozone treatment at room temperature followed by the H2O treatment at 160 åC enable the cyclic deposition of SiO2. V-I measurements of SiO2 grown by the present 160 åC ALD indicated the deposited film has breakdown electric fields from 3 to 11 MV/cm. C-V measurements indicated that the present ALD is available for MOS capacitors.