Photoluminescence of Multilayer InAs Quantum Dots

Multilayer InAs/GaAs quantum dots structures were grown by molecular-beam epitaxy(MBE).The steady-state and time-resolved photoluminescence of the samples were measured at various temperatures.Results showed that multilayer structures could not only narrow the photoluminescence FWHM(full width at the half maximum) but enhance the stability of the photoluminescence lifetime and FWHM.As for the quantum dots with InGaAs cap layer,the photoluminescent spectra became narrower(the narrowest FWHM was only 23.6meV) and the photoluminescent wavelength became longer.The possible reason for the above phenomena was that the InGaAs cap layer could both release the strains in InAs islands and inhibit segregation of In components,resulting in the weaker migration among different quantum dots.