塞贝克系数
单层
凝聚态物理
热电效应
材料科学
硒化物
带隙
直接和间接带隙
费米能级
费米能量
铟
热电材料
电子能带结构
态密度
热导率
半导体
电阻率和电导率
声子
热电发电机
声子散射
功勋
光电子学
纳米技术
物理
电子
热力学
硒
量子力学
冶金
复合材料
作者
Nguyen Thanh Hung,Ahmad R. T. Nugraha,Riichiro Saito
摘要
Thermoelectric properties of monolayer indium selenide (InSe) are investigated by using Boltzman transport theory and first-principles calculations as a function of Fermi energy and crystal orientation. We find that the maximum power factor of p-type (n-type) monolayer InSe can be as large as 0.049 (0.043) W/K$^2$m at 300 K in the armchair direction. The excellent thermoelectric performance of monolayer InSe is attributed to both of its Seebeck coefficient and electrical conductivity. The large Seebeck coefficient originates from the moderate (about 2 eV) band gap of monolayer InSe as an indirect gap semiconductor, while its large electrical conductivity is due to its unique two-dimensional density of states (DOS), which consists of an almost constant DOS near the conduction band bottom and a sharp peak near the valence band top.
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