2D Bi2Se3 materials for optoelectronics

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi 2 Se 3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi 2 Se 3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi 2 Se 3 materials. The structure and inherent properties of Bi 2 Se 3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi 2 Se 3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.