无杂散动态范围
逐次逼近ADC
积分非线性
有效位数
线性
电容器
动态范围
CMOS芯片
12位
功勋
微分非线性
电子工程
物理
开关电容器
电气工程
工程类
转换器
光学
电压
作者
Yung‐Hui Chung,Chia-Hui Tien,Qi-Feng Zeng
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2021-08-10
卷期号:69 (1): 88-99
被引量:22
标识
DOI:10.1109/tcsi.2021.3096242
摘要
This paper presents a 16-bit successive approximation register analog-to-digital converter (ADC) achieving over-100 dB spurious-free dynamic range (SFDR). This ADC uses VCM-based and binary-window digital-to-analog converter (DAC) switching schemes to improve the signal-to-noise and distortion ratio (SNDR). Moreover, a level-2 capacitor swapping scheme is proposed to achieve superior DAC linearity by using two intrinsic true random number sequences. A prototype ADC is fabricated in 180 nm CMOS technology and occupies an active area of 0.53 mm2. At 1 MS/s, it consumes a total power of 1.05 mW from a supply of 1.8 V. The measured differential and integral nonlinearity are −0.65/+0.45 and −2.2/+2.1 least significant bit. With an input of 1 kHz, the measured SNDR and SFDR are 83 dB and 100 dB. The effective number of bits is 13.5, which is equivalent to a Schreier figure-of-merit of 169.8 dB.
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