钙钛矿(结构)
材料科学
量子点
发光二极管
光电子学
二极管
铯
亮度
量子效率
光学
无机化学
化学
物理
结晶学
作者
Chen Zou,Chun‐Ying Huang,Erin M. Sanehira,Joseph M. Luther,Lih Y. Lin
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2017-09-11
卷期号:28 (45): 455201-455201
被引量:48
标识
DOI:10.1088/1361-6528/aa8b8b
摘要
Abstract Recently, all-inorganic perovskites such as CsPbBr 3 and CsPbI 3 , have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI 3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI 3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI 3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.
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