带隙
激子
二硫化钨
分子物理学
密度泛函理论
量子点
三极管
化学物理
作者
Matthew R. Rosenberger,Hsun-Jen Chuang,Kathleen M. McCreary,Connie H. Li,Berend T Jonker
出处
期刊:ACS Nano
[American Chemical Society]
日期:2018-01-17
卷期号:12 (2): 1793-1800
被引量:64
标识
DOI:10.1021/acsnano.7b08566
摘要
Transition-metal dichalcogenides (TMDs) are an exciting class of 2D materials that exhibit many promising electronic and optoelectronic properties with potential for future device applications. The properties of TMDs are expected to be strongly influenced by a variety of defects which result from growth procedures and/or fabrication. Despite the importance of understanding defect-related phenomena, there remains a need for quantitative nanometer-scale characterization of defects over large areas in order to understand the relationship between defects and observed properties, such as photoluminescence (PL) and electrical conductivity. In this work, we present conductive atomic force microscopy measurements which reveal nanometer-scale electronically active defects in chemical vapor deposition-grown WS2 monolayers with defect density varying from 2.3 × 1010 cm–2 to 4.5 × 1011 cm–2. Comparing these defect density measurements with PL measurements across large areas (>20 μm distances) reveals a strong inverse...
科研通智能强力驱动
Strongly Powered by AbleSci AI