Thin film analysis in microprocessor manufacturing using Auger electron spectroscopy

Abstract In the semiconductor industry, Auger electron spectroscopy is widely used for advanced process control and physical failure analysis. Quantified Auger depth profiles are typically based on the peak‐to‐peak intensities of the derivative Auger spectra and do not fully use the spectral information of the Auger peak. More sophisticated data processing procedures based on linear least square (LLS) fits are capable of separating superimposed Auger peaks thus providing access to any chemical state information. One example of an Auger analysis using LLS is the investigation of the interface reaction between copper interconnect and its silicon nitride based cap layer. The effect of the local environment on the silicon LVV Auger peak enables one to identify the chemical bonding of the modified copper. Another study of lead–tin alloy bump surfaces using chemical state analysis provides information about inhomogeneities of the tin oxidation and segregation. Copyright © 2004 John Wiley & Sons, Ltd.