Bias Selectable Dual Band Detectors Based on Vertically Aligned In2S3‐Coated ZnO Nanorod Arrays Grown on p‐GaN

Abstract This study presents the fabrication of ZnO nanotube arrays coated with vertically aligned In 2 S 3 , which were deposited onto a p‐GaN substrate using a wet chemical approach. The In 2 S 3 /ZnO/p‐GaN heterostructure‐based device showed improved photoresponse and self‐driven operation. The device based on ZnO/p‐GaN structure coupling with In 2 S 3 nanoparticles revealed bias selectable photodetection by detecting UV and UV/visible light through bias voltage modulation. This strategy can benefit the fabrication of ZnO/GaN‐based broadband photodetector.