The Study of Sige Channel Formation for FDSOI

Si 1-x Ge x channel is becoming one of the most promising materials to improve PMOS device performance. In this work, thickness relation between oxide and pre-dep Si 1-x Ge x is proposed. Two step methods, which rapid thermal oxidation (RTO) combined with anneal (RTA), were used to form Si 1-x Ge x channel for PMOS at FDSOI structure. The concentration and thickness of Si 1-x Ge x were measured by SIMS and TEM. It was found that the thickness of Si 1-x Ge x channel was decreased with increasing soak time and temperature. The profile of Ge gets better when bake time become longer. The uniformity of Si 1-x Ge x was affected by pre-layers.