材料科学
响应度
光电探测器
纳米线
化学气相沉积
光电子学
光探测
结晶度
带隙
纳米技术
复合材料
作者
Yubin Li,Shiyao Wang,Jinhua Hong,Nannan Zhang,Xin Wei,Tiejun Zhu,Yao Zhang,Zhuo Xu,Kaiqiang Liu,Man Jiang,Hua Xu
出处
期刊:Small
[Wiley]
日期:2023-06-25
卷期号:19 (43)
被引量:3
标识
DOI:10.1002/smll.202302623
摘要
Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.
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