Co‐Self‐Assembled Monolayers Modified NiOx for Stable Inverted Perovskite Solar Cells

钝化 材料科学 单层 钙钛矿(结构) 非阻塞I/O 能量转换效率 载流子寿命 化学工程 光电子学 纳米技术 图层(电子) 催化作用 有机化学 化学 工程类
作者
Qi Cao,Tianyue Wang,Xingyu Pu,Xilai He,Mingchao Xiao,Hui Chen,Lyuchao Zhuang,Qi Wei,Hok‐Leung Loi,Peng Guo,Bochun Kang,Guangpeng Feng,Jing Zhuang,Guitao Feng,Xuanhua Li,Feng Yan
出处
期刊:Advanced Materials [Wiley]
卷期号:36 (16): e2311970-e2311970 被引量:274
标识
DOI:10.1002/adma.202311970
摘要

Abstract [4‐(3,6‐dimethyl‐9H‐carbazol‐9yl)butyl]phosphonic acid (Me‐4PACz) self‐assembled molecules (SAM) are an effective method to solve the problem of the buried interface of NiO x in inverted perovskite solar cells (PSCs). However, the Me‐4PACz end group (carbazole core) cannot forcefully passivate defects at the bottom of the perovskite film. Here, a Co‐SAM strategy is employed to modify the buried interface of PSCs. Me‐4PACz is doped with phosphorylcholine chloride (PC) to form a Co‐SAM to improve the monolayer coverage and reduce leakage current. The phosphate group and chloride ions (Cl − ) in PC can inhibit NiO x surface defects. Meantime, the quaternary ammonium ions and Cl − in PC can fill organic cations and halogen vacancies in the perovskite film to enable defects passivation. Moreover, Co‐SAM can promote the growth of perovskite crystals, collaboratively solve the problem of buried defects, suppress nonradiative recombination, accelerate carrier transmission, and relieve the residual stress of the perovskite film. Consequently, the Co‐SAM modified devices show power conversion efficiencies as high as 25.09% as well as excellent device stability with 93% initial efficiency after 1000 h of operation under one‐sun illumination. This work demonstrates the novel approach for enhancing the performance and stability of PSCs by modifying Co‐SAM on NiO x .
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