Emerging memory electronics for non-volatile radiofrequency switching technologies

Radiofrequency (RF) switches are pervasive in modern communication and connectivity systems such as cellular networks, satellite communications and radar systems. Contemporary systems typically use transistor RF switches; however, owing to the growing demand for devices with high speeds, reliability and energy efficiency, research into alternative materials and devices, particularly those based on non-volatile switching physics, is expanding. In this Review, we discuss recent advances in RF switches based on emerging and two-dimensional (2D) materials. Following an overview of RF switches based on emerging memory technology, such as random-access memory, conductive-bridge random-access memory and phase-change memory, we describe 2D non-volatile RF switch technologies, including device fabrication, high-frequency performance, switching time, power handling, electromagnetic and thermal studies. We then highlight integration of silicon complementary metal–oxide–semiconductors with various switch applications in connectivity circuits. Finally, we outline possible directions for future research such as sixth-generation (6G) networks with low latency and high bandwidth for augmented reality and virtual reality. Emerging memory electronics is leading to exciting possibilities for radiofrequency switching, which could be important for meeting the requirements of modern communication systems. This Review outlines current RF switch technologies, proposes 2D memristors, and discusses their potential applications.