Simulation of MHD-Influence on Silicon Melt Flow in the Czochralski Process

Abstract The applications of a rotating magnetic field (RMF) in semiconductor crystals’ growth technology from a melt by the Czochralski method (CzM) are discussed, including the use of the known data of physical modeling of electrically conductive KOH solution flows in a cylindrical crucible under RMF to verify the results of this work. A mathematical model of hydrodynamic processes is considered in relation to silicon single crystal growth with a diameter of 100 mm on a Redmet-30 furnace equipped with an RMF magnet. The test results of the calculated azimuth velocity profile with the measured data in KOH solution are presented. The results of parametric studies of the stability of melt flows depending on the frequency and magnitude of RMF induction are summarized in a stability diagram.