记忆电阻器
透视图(图形)
纳米技术
材料科学
离子键合
非易失性存储器
光电子学
离子
化学
计算机科学
电子工程
工程类
人工智能
有机化学
作者
Miliang Zhang,Guoheng Xu,Hongjie Zhang,Kai Xiao
出处
期刊:ACS Nano
[American Chemical Society]
日期:2025-03-14
标识
DOI:10.1021/acsnano.4c17760
摘要
The fast development of artificial intelligence and big data drives the exploration of low-power computing hardware. Neuromorphic devices represented by memristors may provide a possible computing paradigm beyond von Neumann's architecture because they enable the integration of processing and storage units by mimicking how the brain processes complex information in parallel. In the brain, information is processed via multilevel spiking coding and event-driven mechanisms, whose simplified neural circuit is represented by the leaky-integration-and-fire model combining volatile threshold switching memristors and capacitors. As a computing unit to emulate the working environment and explore the unique functions of ions and molecules of biological systems, nanofluidic volatile threshold switching ionic memristors become essential but are still missing. This Perspective will review the mechanism and role of threshold switching memristors as a building block for neuromorphic computing and list three possible routes for nanofluidic ones.
科研通智能强力驱动
Strongly Powered by AbleSci AI