An Ab initio study on the enhancement of tunneling magnetoresistance and spin injection in Ni/vacuum/Ni magnetic tunnel junctions by h-BN stacking

With a comparative study of the transport properties of Ni/vacuum/Ni and Ni-h-BN/h-BN/Ni-h-BN MTJs, we show that the h-BN stacking layer will greatly enhance the tunneling magnetoresistance and spin injection efficiency of the Ni/vacuum/Ni MTJs.