Giant laser-induced resistive switching effect in Ag/TiOx/p-Si structures

Compared with traditional electric-field-controlled resistive random-access memory, optoelectronic resistive random-access memory (ORRAM) can be modulated in more dimensions by applying a laser; this is identified as a potential device to meet the demands of neuromorphic vision sensors. As a device with a wide range of application prospects, ORRAM still faces many challenges, such as an unclear mechanism and poor performance. Using the photosensitive properties of ${\mathrm{Ti}\mathrm{O}}_{2}$ and the effects of the oxygen vacancy in anatase ${\mathrm{Ti}\mathrm{O}}_{2}$, we successfully obtain the giant laser-induced resistance effect in the $\mathrm{Ag}/{\mathrm{Ti}\mathrm{O}}_{x}/p$-$\mathrm{Si}$ structure, and its electrical conductivity is enhanced by about 4000 times with a response time of less than 24 \textmu{}s (the response time of most ${\mathrm{Ti}\mathrm{O}}_{2}$ thin-film devices is in the order of milliseconds to seconds), which greatly improves the performance of ORRAM. This work provides a scalable strategy for the development of ORRAM devices and brings ORRAM closer to practical applications.