First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

凝聚态物理 各向异性 声子 非谐性 材料科学 热导率 电子 半导体 热电效应 格子(音乐) 热电材料 电阻率和电导率 塞贝克系数 物理 热力学 光学 光电子学 量子力学 复合材料 声学
作者
Ruiqiang Guo,Xinjiang Wang,Youdi Kuang,Baoling Huang
出处
期刊:Physical Review B [American Physical Society]
卷期号:92 (11) 被引量:499
标识
DOI:10.1103/physrevb.92.115202
摘要

We conduct comprehensive investigations of both thermal and electrical\ntransport properties of SnSe and SnS using first-principles calculations\ncombined with the Boltzmann transport theory. Due to the distinct layered\nlattice structure, SnSe and SnS exhibit similarly anisotropic thermal and\nelectrical behaviors. The cross-plane lattice thermal conductivity $\\kappa_{L}$\nis 40-60% lower than the in-plane values. Extremely low $\\kappa_{L}$ is found\nfor both materials because of high anharmonicity. It is suggested that\nnanostructuring would be difficult to further decrease $\\kappa_{L}$ because of\nthe short mean free paths of dominant phonon modes (1-30 nm at 300 K) while\nalloying would be efficient in reducing $\\kappa_{L}$ considering that the\nrelative $\\kappa_{L}$ contribution ($\\sim$ 65%) of optical phonons is\nremarkably large. On the electrical side, the anisotropic electrical\nconductivities are mainly due to the different effective masses of holes and\nelectrons along the $a$, $b$ and $c$ axes. This leads to the highest optimal\n$ZT$ values along the $b$ axis and lowest ones along the $a$ axis in both\n$p$-type materials. However, the $n$-type ones exhibit the highest $ZT$s along\nthe $a$ axis due to the enhancement of power factor when the chemical potential\ngradually approaches the secondary band valley that causes significant increase\nin electron mobility and density of states. SnSe exhibits larger optimal $ZT$s\ncompared with SnS in both $p$-type and $n$-type materials. For both materials,\nthe peak $ZT$s of $n$-type materials are much higher than those of $p$-type\nones along the same direction. The predicted highest $ZT$ values at 750 K are\n1.0 in SnSe and 0.6 in SnS along the $b$ axis for the $p$-type doping while\nthose for the $n$-type doping reach 2.7 in SnSe and 1.5 in SnS along the $a$\naxis, rendering them among the best bulk thermoelectric materials for\nlarge-scale applications.\n
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