"No cost" reduced-leakage Schottky diode by ion implantation

Lightly doped drain (LDD) ion implants were used to adjust the barrier height of TiSi/sub 2/ and PtSi, n-type Schottky diodes. Thus, low turn-on, low leakage diodes were produced with no extra cost to an existing BiCMOS process. To help predict the performance characteristics of these diodes, a closed form analytical model was derived for determining the effective barrier height of a one dimensional n-type Schottky diode with a shallow p/sup +/ surface layer. Finally, process and device simulations were utilized to provide physical insight into the diodes' characteristics.