Conductance Modulation Mechanisms in Gallium Oxide‐Based Neuromorphic Devices: From Device Physics to Intelligent Applications

ABSTRACT This review systematically surveys the recent progress in gallium oxide (Ga 2 O 3 )‐based neuromorphic devices. As an ultrawide‐bandgap semiconductor, Ga 2 O 3 offers controllable doping, an exceptionally high breakdown electric field, multiple polymorphs, and excellent thermal stability. These intrinsic properties make Ga 2 O 3 particularly suitable for neuromorphic devices operating under high‐temperature, strong‐radiation, and solar‐blind deep‐ultraviolet (DUV) conditions. Beyond environmental stability, Ga 2 O 3 can also support diverse conductance‐modulation mechanisms, including defect‐mediated carrier trapping, interface‐barrier engineering, conductive‐filament evolution, multimodal coupling, and gate‐controlled channel modulation, thereby providing a versatile material platform for programmable synaptic devices driven by optical, electrical, or coupled external stimuli. Starting from the conductance‐modulation mechanisms underlying synaptic functions, we classify Ga 2 O 3 neuromorphic devices and systematically summarize their physical mechanisms, structural designs, and conductance‐tuning schemes, highlighting the potential of Ga 2 O 3 for neuromorphic computing, low‐power operation, and spectrally selective sensing, as well as its broad prospects in fundamental computing and information security, bio‐adaptive reflex mechanisms, and computer vision. Finally, we summarize the progress and remaining challenges of Ga 2 O 3 neuromorphic devices, and outline future research directions including materials doping, heterostructure integration, multimodal fusion, high‐density arrays, and energy‐efficiency optimization to fully exploit Ga 2 O 3 for brain‐inspired computing and intelligent perception.