Thermal Model of GaN-HEMT using Thermal Conductivity of Si/SiC on SiC Substrate

High-power and high-temperature operations of AlGaN/GaN high-electron-mobility transistors (HEMTs) require efficient heat removal. This simulation compares and shows the effect of thermal conductivities of silicon carbide (SiC) and silicon (Si) in AlGaN/GaN HEMT on SiC substrate. In the study of these thermal conductivities over the temperature range of 300 K to 415 K, the thermal conductivity of SiC on GaN-HEMT is more efficient than of Si. Thus, SiC provides an improved cooling of HEMT devices. In this research, all other structures and parameters are kept constant except the thermal conductivity.