扫描隧道显微镜
晶体缺陷
铟
氧化物
材料科学
纳米技术
过渡金属
化学计量学
扫描探针显微镜
金属
显微镜
导电原子力显微镜
化学物理
扫描电容显微镜
原子力显微镜
催化作用
化学
结晶学
扫描电子显微镜
光电子学
物理化学
扫描共焦电子显微镜
光学
冶金
复合材料
物理
生物化学
作者
Martin Setvín,M. Wagner,Michael Schmid,Gareth S. Parkinson,Ulrike Diebold
摘要
Metal oxides are abundant in nature and they are some of the most versatile materials for applications ranging from catalysis to novel electronics. The physical and chemical properties of metal oxides are dramatically influenced, and can be judiciously tailored, by defects. Small changes in stoichiometry introduce so-called intrinsic defects, e.g., atomic vacancies and/or interstitials. This review gives an overview of using Scanning Probe Microscopy (SPM), in particular Scanning Tunneling Microscopy (STM), to study the changes in the local geometric and electronic structure related to these intrinsic point defects at the surfaces of metal oxides. Three prototypical systems are discussed: titanium dioxide (TiO2), iron oxides (Fe3O4), and, as an example for a post-transition-metal oxide, indium oxide (In2O3). Each of these three materials prefers a different type of surface point defect: oxygen vacancies, cation vacancies, and cation adatoms, respectively. The different modes of STM imaging and the promising capabilities of non-contact Atomic Force Microscopy (nc-AFM) techniques are discussed, as well as the capability of STM to manipulate single point defects.
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