Research on ESD Breakdown Model in IC Silicon Dioxide Films

A physical model of dielectric breakdown was presented in IC silicon dioxide films. It is discussed that the dependence between dielectric field strength and dielectric thickness by using this model, and analyzes the size effect of the dielectric breakdown voltage and ESD pulses. As to a film, if its thickness is 0.04 μm and area is 9.09×10-6 cm2, the breakdown voltage of this film is about 208 V; If keeping its effective area and reducing its thickness to 0.004 μm, its breakdown voltage would become 160 V; If reducing its effective area proportionally, its breakdown voltage is about 20 V, thus its capability of anti-ESD must depress.