Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534nm
作者
Mark A. Wistey,Seth R. Bank,Hopil Bae,H. B. Yuen,Evan Pickett,James S. Harris
标识
DOI：10.1109/cleo.2006.4628312
摘要
Electrically pulsed GaInNAsSb-based, vertical cavity surface emitting lasers (VCSELs) at 1534nm are reported. The lasers operated below −25C due to a gain-cavity misalignment. These are the first monolithic, C-band VCSELs on GaAs.
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(2025-6-4)
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