Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

Deep level defects in high-conductivity ZnSe have been observed with optical deep level transient spectroscopy. An electron trap and hole trap with energy levels at Ec −0.33 and Ev +0.71 eV, respectively, were detected in the as-grown material. Trap concentrations were in the range of 0.4–2.0×1015 cm−3. For zinc annealed samples, a trap at Ev +0.21 eV was also observed in concentrations as high as 9×1015 cm−3. The chemical identity of the hole traps remain undetermined, but experimental evidence indicates they may involve native defects.