杰纳斯
MXenes公司
理想(伦理)
肖特基势垒
异质结
范德瓦尔斯力
肖特基二极管
电极
凝聚态物理
纳米技术
材料科学
电子能带结构
光电子学
化学物理
化学
物理
哲学
认识论
分子
物理化学
有机化学
二极管
作者
Yuanyuan Wang,Wei Wei,Baibiao Huang,Ying Dai
摘要
On the basis of first-principles calculations, we examined the possibility of functionalized transition metal carbides and nitrides (f-MXenes) as ideal electrode materials for two-dimensional (2D) Janus MoSSe through interfacial electronic properties and Schottky barriers within MoSSe/f-MXene van der Waals (vdW) heterostructures. We found that the interactions between MoSSe and f-MXenes are weak, and thus the intrinsic electronic features of MoSSe could be reserved. Based on band structure calculations, the minus n-type (vanishing) Schottky barrier heights could be assigned to MoSSe/Ti2C(OH)2 and MoSSe/Mo2C(OH)2, and the p-type Schottky barrier height assigned to Sc2NO2 turns out to be negligible. When taking the charge redistribution at the interfaces into account, our band structure results are consistent with the modified Schottky-Mott equation. Our work provides a reference for selecting ideal electrode materials and channel materials for electronic applications.
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