荧光粉
发光二极管
光电子学
量子效率
材料科学
激发
吸收(声学)
发光
光子
原子物理学
光学
物理
量子力学
复合材料
作者
David Van der Heggen,Jonas Joos,Philippe F. Smet
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2018-10-12
卷期号:5 (11): 4529-4537
被引量:67
标识
DOI:10.1021/acsphotonics.8b00979
摘要
Abstract The quantum efficiency is a key metric in lighting technology and for the quantification of luminescent processes, indicating how many photons are emitted with respect to the number of absorbed photons. Ideally, this value should approach unity to reduce losses, for instance in the common phosphor converted white LEDs. In this work we demonstrate that in luminescent materials where energy can be stored at defect centers, like in the extreme case of persistent phosphors, the quantum efficiency depends on the excitation intensity. For the green emitting SrAl2O4:Eu2+,Dy3+, which has been proposed for use in AC-LEDs, the internal quantum efficiency drops for increasing excitation intensity from 71% to 54%. At elevated excitation intensities, as encountered in LEDs, the trapped charge carriers can be optically detrapped by the excitation light, leading to this strong reduction of the overall quantum efficiency. Considering that the absorption cross section for this process is 6–29× larger than the absorption cross section for the luminescent ion, the efficiency of LED phosphors can be increased by avoiding the presence of defects acting as trapping centers. Finally, designing persistent phosphors with defects that show a limited optical response for the excitation light could strongly increase their energy storage capacity.
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